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N-Channel 30-V (D-S) MOSFET
Si4168DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0057 at VGS = 10 V 30
0.0076 at VGS = 4.5 V
ID (A)a 24 21
Qg (Typ.) 13.8 nC
FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS • Notebook DC/DC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Avalanche Current Avalanche Energy
L = 0.
SI4168DY Datasheet
