IRFIB7N50A - Power MOSFET

Features

Low Gate Charge Qg Results in Simple Drive Requirement Available.
Improved Gate, Avalanche and Dynamic dV/dt RoHS.
Ruggedness.

Vishay

Datasheet Details

Part number	IRFIB7N50A
Manufacturer	Vishay
File Size	143.83 KB
Description	Power MOSFET
Datasheet	IRFIB7N50A Datasheet

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Full PDF Text Transcription

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IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Ruggedness COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • High Voltage Isolation = 2.

Published: Oct 3, 2015 |