IRFI840G Power MOSFET

Vishay

Description

www.vishay.com Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 500 VGS = 10 V 0.85 Qg (Max.) (nC) .
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRFI840G
Manufacturer: Vishay ↗
File Size: 1.51 MB
Datasheet: IRFI840G-Vishay.pdf
Description: Power MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance please see www. vishay. com/d

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single scr

IRFI840G Distributors

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IRFI840G Power MOSFET Vishay

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