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IRFI744G Power MOSFET

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Description

Power MOSFET IRFI744G, SiHFI744G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS
* Sink to Lead Creepage Dist. = 4.8 mm COMPLIANT
* Dynamic dV/dt Rating
* Low Thermal Resistance

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100

IRFI744G Distributors

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