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TZMB3V3 - Silicon Epitaxial Planar Z-Diodes

Download the TZMB3V3 datasheet PDF (TZM included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon epitaxial planar z-diodes.

Features

  • D D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ.
  • tolerance ± 2% 94 9371.

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Note: The manufacturer provides a single datasheet file (TZM-B.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TZMB3V3
Manufacturer Vishay
File Size 76.46 KB
Description Silicon Epitaxial Planar Z-Diodes
Datasheet download datasheet TZMB3V3 Datasheet

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Full PDF Text Transcription

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TZMB... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85610 Rev.
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