Description
In the K817P part each channel consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single) plastic dual inline package.
BSI: EN 60065:2002, EN 60950-1:2006
DIN EN 60747-5-2 (VDE 0884)
FIMKO
UL file no.
cUL tested to CSA 22.2 bulletin 5A
Features
- Endstackable to 2.54 mm (0.1") spacing.
- DC isolation test voltage 5000 VRMS.
- Current transfer ratio (CTR) selected into
groups.
- Low temperature coefficient of CTR.
- Wide ambient temperature range.
- Available in single, dual and quad channel packages.
- Material categorization: For definitions of compliance
please see www. vishay. com/doc?99912.
K817P6 Datasheet
