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BZX85B30 - Silicon Epitaxial Planar Z-Diodes

Features

  • D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability.

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Datasheet Details

Part number BZX85B30
Manufacturer Vishay
File Size 56.68 KB
Description Silicon Epitaxial Planar Z-Diodes
Datasheet download datasheet BZX85B30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BZX85B... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V Document Number 85607 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) BZX85B...
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