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BPW16N - Silicon NPN Phototransistor

Description

BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-¾ plastic package with flat window.

It is sensitive to visible and near infrared radiation.

On PCB this package size enables assembly of arrays with 2.54 mm pitch.

Features

  • Package type: leaded.
  • Package form: T-¾.
  • Dimensions (in mm): Ø 1.8.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity: ϕ = ± 40°.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note.
  • Please see document “Vishay Material Category Policy”: www. vishay. com/doc?99902.

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Datasheet Details

Part number BPW16N
Manufacturer Vishay
File Size 93.00 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPW16N Datasheet

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www.vishay.com BPW16N Vishay Semiconductors Silicon NPN Phototransistor 94 8638 DESCRIPTION BPW16N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-¾ plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 40° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.
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