VFT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Datasheet Details

Part number	VFT2045C
Manufacturer	Vishay Siliconix
File Size	97.74 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VFT2045C_VishaySiliconix.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition 1 VFT2045C PIN 1 PIN 3 PIN 2 2 3.

📁 VFT2045C Similar Datasheet

VFT2045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2045CBP - Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VFT2045BP - Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2060C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2060G - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2080C - Dual Trench MOS Barrier Schottky Rectifier (Vishay)

Other Datasheets by Vishay Siliconix

Published: Mar 31, 2011 |