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V50100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V50100P Description

www.DataSheet4U.com V50100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V.
only.

V50100P Features

* Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Mechanical Data Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte

V50100P Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection. Maximum Ratings (TA = 25 °C unless otherwise specified) Parameter Maximum repetitive peak reverse voltage RMS reverse voltage for sine wave DC blockin

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Datasheet Details

Part number
V50100P
Manufacturer
Vishay ↗ Siliconix
File Size
391.85 KB
Datasheet
V50100P_VishaySiliconix.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
Vishay Siliconix V50100P-like datasheet