SiHFI9610G Datasheet (Vishay Siliconix)

SiHFI9610G, Power MOSFET

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-indus

SiHFI9610G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* P-Channel

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available 3.0 RoHS

* COMPLIANT