SiHF9510 Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRF9510, SiHF9510 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) - 100 VGS = - 10 V 8.7 Qgs (nC) 2.2 Qgd (nC).
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHF9510
Manufacturer: Vishay ↗ Siliconix
File Size: 273.59 KB
Datasheet: SiHF9510_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* P-Channel
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIANT D

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IR

SiHF9510 Distributors

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SiHF9510 Power MOSFET Vishay Siliconix

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