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SiHF634NL - Power MOSFET

Download the SiHF634NL datasheet PDF. This datasheet also covers the SiHF634N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHF634N_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
SiHF634S Power MOSFET Vishay
SiHF630S Power MOSFET Vishay
SiHF610L Power MOSFET Vishay
SiHF610S Power MOSFET Vishay
SiHF614 Power MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SiHF634N Power MOSFET
SiHF634NS Power MOSFET
SiHF634 Power MOSFET
SiHF630 Power MOSFET
SIHF610 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single 0.435 I2PAK (TO-262) TO-220 D S D G S D GG D2PAK (TO-263) S N-Channel MOSFET GD S FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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