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SUV85N10-10 - N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

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Features

  • rDS(on) (W) ID (A) 85 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0105 @ VGS = 10 V 0.012 @ VGS = 4.5 V.

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Datasheet Details

Part number SUV85N10-10
Manufacturer Vishay
File Size 96.22 KB
Description N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
Datasheet download datasheet SUV85N10-10 Datasheet

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SUV85N10-10 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 85 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0105 @ VGS = 10 V 0.012 @ VGS = 4.5 V APPLICATIONS D DC/DC Primary Side Switch D TO-262 1 2 3 G G D S Top View SUV85N10-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range w w .D w TC = 25_C TC = 125_C t a S a e h ID t e U 4 S .
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