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SIHG25N40D - Power MOSFET

Features

  • 450 0.17.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching.
  • Compliant to RoHS Directive 2011/65/EU TO-247AC G S D G S N-Channel MOSFET.

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Full PDF Text Transcription

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SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 88 12 23 Single D FEATURES 450 0.
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