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SI4943DY - Dual P-Channel MOSFET

Features

  • D TrenchFETr Power MOSFET ID (A) - 8.4 rDS(on) (W) 0.019 @ VGS = - 10 V.

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Datasheet Details

Part number SI4943DY
Manufacturer Vishay
File Size 40.31 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SI4943DY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 0.030 @ VGS = - 4.5 V - 6.7 FEATURES D TrenchFETr Power MOSFET ID (A) - 8.4 rDS(on) (W) 0.019 @ VGS = - 10 V APPLICATIONS D Load Switching - Computer - Game Systems D Battery Switching - 2-Cell Li-lon S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 6.7 IDM IS - 1.7 2.0 1.
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