The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
New Product
Si4922DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.016 @ VGS = 10 V 0.018 @ VGS = 4.5 V 0.024 @ VGS = 2.5 V
ID (A)
8.8 8.3 7.2
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
D1 D1
D2 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
30 "12 8.8 6.7 7.1 5.3 "30 1.7 0.9 2.0 1.1 1.3 0.
SI4922DY Datasheet
