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Si2328DS
New Product
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.250 @ VGS = 10 V
ID (A)
1.5
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2328DS (D8)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C L = 0.1 mH TA= 25_C TA= 70_C
Symbol
VDS VGS
5 sec
100 "20 1.5
Steady State
Unit
V
1.15 0.92 6 6 1.8 0.6 mJ A 0.73 0.47 –55 to 150 W _C A
ID IDM IAS EAS IS
1.2
1.25 PD TJ, Tstg 0.
SI2328DS Datasheet
