IRL510 Power MOSFET

Vishay Siliconix

Description

www.vishay.com IRL510 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 VGS = 5.0 V .
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRL510
Manufacturer: Vishay ↗ Siliconix
File Size: 233.21 KB
Datasheet: IRL510_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* 175 °C operating temperature Available
* Fast switching
* Ease of paralleling
* Material categoriz

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRL510PbF IRL510PbF-BE3 ABSOLUTE MAXIM

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IRL510 Power MOSFET Vishay Siliconix

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