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GB75DA120UP Insulated Gate Bipolar Transistor

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Description

www.DataSheet.co.kr GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A .

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Features

* NPT Generation V IGBT technology
* Square RBSOA
* HEXFRED® low Qrr, low switching energy
* Positive VCE(on) temperature coefficient
* Fully isolated package SOT-227
* Speed 8 kHz to 60 kHz
* Very low internal inductance ( 5 nH typical)

GB75DA120UP Distributors

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