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VOM617A GaAs infrared emitting diode emitter

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Description

www.vishay.com VOM617A Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package A1 C2 4C 3E i179089 LINKS TO AD.
The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is i.

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Features

* a high current transfer ratio, low coupling capacitance, and high isolation voltage. These coupling devices are designed for signal transmission between two electrically separated circuits. FEATURES
* Operating temperature from -55 °C to +110 °C
* SOP-4 mini-flat package
* I

Applications

* PLCs
* Telecommunication
* Lighting control system
* Solar inverters
* AC drives AGENCY APPROVALS (All parts are certified under base model VOM617A)
* UL1577
* cUL
* DIN EN 60747-5-5 (VDE 0884-5), available with option 1
* CQC

VOM617A Distributors

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VOM617A GaAs infrared emitting diode emitter Vishay Semiconductors
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