Datasheet4U Logo Datasheet4U.com

VSO013N08HS - N-Channel Advanced Power MOSFET

Features

  • N-Channel，Logic level 10V.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • High conversion efficiency.
  • Pb-free lead plating; RoHS compliant VSO013N08HS 80V/14A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V 10 mΩ 14 A SOP8 Part ID VSO013N08HS Package Type SOP8 Marking 013N08H Tape and reel information 3000Pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown.

📥 Download Datasheet

Datasheet Details

Part number VSO013N08HS
Manufacturer Vanguard Semiconductor
File Size 407.96 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSO013N08HS Datasheet

📁 Similar Datasheet

  • VSOF5 - LSI Assembly (Rohm)
  • VSOP38336 - Preamplifier (Vishay)
  • VSOP38338 - Preamplifier (Vishay)
  • VSOP58436 - IR Remote Control Preamplifier (Vishay)
  • VSOP58438 - IR Remote Control Preamplifier (Vishay)
  • VSOP584xx - Preamplifier Circuit (Vishay)
  • VSOP98260 - Preamplifier (Vishay)
  • VSOR - Dual-In-Line Resistor Networks (Vishay Siliconix)
  • VSORC - T-Filter Resistor/Capacitor Networks (Vishay Siliconix)
  • VSORC-AA - T-Filter Resistor/Capacitor Networks (Vishay Siliconix)
Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
Features  N-Channel，Logic level 10V  Enhancement mode  Very low on-resistance  Fast Switching  High conversion efficiency  Pb-free lead plating; RoHS compliant VSO013N08HS 80V/14A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V 10 mΩ 14 A SOP8 Part ID VSO013N08HS Package Type SOP8 Marking 013N08H Tape and reel information 3000Pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS IAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC =25°C TA =70°C TC =25°C ID=16A TA =25°C MSL TSTG TJ Stor
Published: |