VS6808AH Dual N-Channel Advanced Power MOSFET

Vanguard Semiconductor

Description

VS6808AH 20V/6A Common-Drain Dual N-Channel Advanced Power MOSFET .
VS6808AH designed by the trench processing techniques to achieve extremely low on-resistance,fast switching speed and improved transfer effective .

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Datasheet Specifications

Part number: VS6808AH
Manufacturer: Vanguard Semiconductor
File Size: 255.92 KB
Datasheet: VS6808AH-VanguardSemiconductor.pdf
Description: Dual N-Channel Advanced Power MOSFET

Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current ESD HBM TC =25°C Mounted on Large Hea

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VS6808AH Dual N-Channel Advanced Power MOSFET Vanguard Semiconductor

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