VG3617161ET - CMOS Synchronous Dynamic RAM

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Vanguard International Semiconductor

Datasheet Details

Part number	VG3617161ET
Manufacturer	Vanguard InterNational Semiconductor
File Size	1.10 MB
Description	CMOS Synchronous Dynamic RAM
Datasheet	VG3617161ET Datasheet
Additional preview pages of the VG3617161ET datasheet.

Product details

Description

VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank.It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply.This SDRAM is delicately designed with performance concern for current high-speed application.Programmable CAS Latency and Burst Length make it possible to be used in widely various domains.It is packaged by using JEDEC stan

Features

Single 3.3V +/- 0.3V power supply.
Clock frequency:166MHz, 143MHz, 125MHz.
Fully synchronous with all signals referenced to a positive clock edge.
Programmable CAS Iatency (2,3).
Programmable burst length (1,2,4,8,& Full page).
Programmable wrap sequence (Sequential/Interleave).
Automatic precharge and controlled precharge.
Auto refresh and self refresh modes.
Dual internal banks controlled by A11(Bank select).

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Published: Apr 16, 2005 |