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VST12N100, VST12N100-TF MOSFET

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Description

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The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
VST12N100, VST12N100-TF
Manufacturer
VSEEI
File Size
717.03 KB
Datasheet
VST12N100-TF-VSEEI.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF.
Please refer to the document for exact specifications by model.

Features

* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating

VST12N100 Distributors

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