VST12N100, VST12N100-TF - MOSFET

VST12N100 Description

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The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VST12N100 Features

* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating

📥 Download Datasheet

VST12N100 Datasheet Preview — This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: VST12N100, VST12N100-TF
Manufacturer: VSEEI
File Size: 717.03 KB
Datasheet: VST12N100-TF-VSEEI.pdf
Description: MOSFET
Note: This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF.
Please refer to the document for exact specifications by model.

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MOSFET VSEEI

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