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2N6298 - PNP Darlington Power Silicon Transistor

Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540.
  • TO-66 (TO-213AA) Package.
  • Ideal for High Gain Amplifier and Medium Speed Switching.

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Datasheet Details

Part number 2N6298
Manufacturer VPT
File Size 380.58 KB
Description PNP Darlington Power Silicon Transistor
Datasheet download datasheet 2N6298 Datasheet

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Full PDF Text Transcription

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2N6298 & 2N6299 PNP Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540 • TO-66 (TO-213AA) Package • Ideal for High Gain Amplifier and Medium Speed Switching Applications Rev. V5 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = -100 mA dc, 2N6298 IC = -100 mA dc, 2N6299 V(BR)CEO V dc -60 -80 — Collector - Emitter Cutoff Current VCE = -30 V dc, 2N6298 VCE = -40 V dc, 2N6299 ICEO mA dc — -0.5 -0.5 Collector - Emitter Cutoff Current VCE = -60 V dc, VBE = +1.5 V dc, 2N6298 VCE = -80 V dc, VBE = +1.5 V dc, 2N6299 ICEX1 µA dc — -10 -10 Emitter - Base Cutoff Current VEB = -5 V dc IEBO mA dc — -2.
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