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2N6052 - PNP Darlington Power Silicon Transistor

This page provides the datasheet information for the 2N6052, a member of the 2N6051 PNP Darlington Power Silicon Transistor family.

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501.
  • TO-3 (TO-204AA) Package.
  • Ideal for High Gain Amplifier and Switching.

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Datasheet preview – 2N6052

Datasheet Details

Part number 2N6052
Manufacturer VPT
File Size 634.93 KB
Description PNP Darlington Power Silicon Transistor
Datasheet download datasheet 2N6052 Datasheet
Additional preview pages of the 2N6052 datasheet.

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Full PDF Text Transcription

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2N6051 & 2N6052 PNP Darlington Power Silicon Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501 • TO-3 (TO-204AA) Package • Ideal for High Gain Amplifier and Switching Applications Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = -10 mA dc, 2N6051 IC = -10 mA dc, 2N6052 V(BR)CEO V dc -80 -100 — Collector - Emitter Cutoff Current VCE = -40 V dc, 2N6051 VCE = -50 V dc, 2N6052 ICEO mA dc — -1 Collector - Emitter Cutoff Current VCE = -80 V dc, VBE = +1.5 V dc, 2N6051 VCE = -100 V dc, VBE = +1.5 V dc, 2N6052 ICEX1 mA dc — -.
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