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2N5793 - NPN Dual Silicon Transistor

Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/495.
  • TO-78 and U package types.
  • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Off Characteristics Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio IC = 10 mA dc VCB = 75 V dc VCB =.

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Datasheet Details

Part number 2N5793
Manufacturer VPT
File Size 610.27 KB
Description NPN Dual Silicon Transistor
Datasheet download datasheet 2N5793 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5793, 2N5793A, 2N5794 2N5794A, 2N5794AU, 2N5794U NPN Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/495 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Off Characteristics Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio IC = 10 mA dc VCB = 75 V dc VCB = 50 V dc VEB = 6.0 V dc VEB = 4.0 V dc 2N5793, A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.
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