2N2920L, 2N2919 - NPN Dual Silicon Transistor

Datasheet Details

Part number	2N2920L, 2N2919
Manufacturer	VPT
File Size	511.21 KB
Description	NPN Dual Silicon Transistor
Datasheet	2N2919-VPT.pdf
Note	This datasheet PDF includes multiple part numbers: 2N2920L, 2N2919. Please refer to the document for exact specifications by model.

Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355.
TO-78 and U package types.
Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc.
Max. 10 Emitter - Base Cutoff Current Breakdown Voltage, Collector-Emitter VEB = 6 V dc IC = 10 mA dc IEBO1 µA dc.
10 V(BR)C.

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Published: Feb 26, 2025 |