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1N6844U3 - Silicon Schottky Barrier Diode

1N6844U3 Description

1N6844U3 Silicon Schottky Barrier Diode .
The 1N6844U3 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

1N6844U3 Features

* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/679
* Low Forward Voltage and Reverse Leakage
* Reverse Breakdown Voltage: 100 V
* Hermetically Sealed, Low Profile Ceramic SMD0.5 package (U3)
* High Surge Capability
* Low Capacitance Descr

1N6844U3 Applications

* The 1N6844U3 is designed to be used in a wide variety of applications, such as high frequency switching power supplies and resonant power converters. Electrical Specifications: TC = +25°C (unless otherwise specified) Symbol Reverse Leakage Current Reverse Leakage Current VR = 100 V (pk) TC = +125

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Datasheet Details

Part number
1N6844U3
Manufacturer
VPT
File Size
436.99 KB
Datasheet
1N6844U3-VPT.pdf
Description
Silicon Schottky Barrier Diode

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Silicon Schottky Barrier Diode VPT
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