Description
VBZM7N60 / VBZMB7N60 /$IBOOFM07 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at 25 °C (Ω) Qg max.(nC) Qgs (nC).
Features
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
Applications
* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
* Industrial
D
GD S Top View
GDS Top View
S N-Channel MOSFET
A