VBZE30N10 N-Channel MOSFET

VBsemi

Description

VBZE30N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V ID (A) 35 .

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Datasheet Specifications

Part number: VBZE30N10
Manufacturer: VBsemi
File Size: 258.41 KB
Datasheet: VBZE30N10-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature
* Low Thermal Resistance Package Available RoHS
* COMPLIANT D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS G

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