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VBQF1101N N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.010 at VGS = 10 V
DFN 3x3 EP
Top View
Bottom View
Pin 1
ID (A) 50
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested
APPLICATIONS • Isolated DC/DC Converters
RoHS
COMPLIANT
Top View
1
8
2
7
3
6
4
5
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Single Pulse Avalanche Energyb
L = 0.
VBQF1101N Datasheet
