VBQF1101N N-Channel MOSFET

VBsemi

Description

VBQF1101N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.010 at VGS = 10 V DFN 3x3 EP Top View Bo.

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Datasheet Specifications

Part number: VBQF1101N
Manufacturer: VBsemi
File Size: 231.49 KB
Datasheet: VBQF1101N-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package

Applications

* Isolated DC/DC Converters RoHS COMPLIANT Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC =

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