Part number:
VBPB1102N
Manufacturer:
VBsemi
File Size:
220.29 KB
Description:
N-channel mosfet.
VBPB1102N Datasheet (220.29 KB)
Datasheet Details
VBPB1102N Features
* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* 100 % Rg Tested APPLICATIONS
* Isolated DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-So
VBPB1102N Datasheet (220.29 KB)
Datasheet Details
VBPB1102N
VBsemi
220.29 KB
N-channel mosfet.
📁 Related Datasheet
VBPB112MI25 1200V Trench and Fieldstop IGBT (VBsemi)
VBPB112MI40 1200V Trench and Fieldstop IGBT (VBsemi)
VBPB112MI50 1200V Trench and Fieldstop IGBT (VBsemi)
VBPB165R20S N-Channel MOSFET (VBsemi)
VBPB165R47S N-Channel MOSFET (VBsemi)
VBPB16I15 600V Trench and Fieldstop IGBT (VBsemi)
VBPB16I20 600V Trench and Fieldstop IGBT (VBsemi)
VBP104FAS Silicon PIN Photodiode (Vishay)
VBPB1102N Distributor