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VBPB1102N N-Channel MOSFET

VBPB1102N Description

VBPB1102N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S.

VBPB1102N Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package

VBPB1102N Applications

* Isolated DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Cu

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Datasheet Details

Part number
VBPB1102N
Manufacturer
VBsemi
File Size
220.29 KB
Datasheet
VBPB1102N-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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