Datasheet Specifications
- Part number
- VBPB1102N
- Manufacturer
- VBsemi
- File Size
- 220.29 KB
- Datasheet
- VBPB1102N-VBsemi.pdf
- Description
- N-Channel MOSFET
Description
VBPB1102N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S.
Features
* TrenchFET® Power MOSFETApplications
* Isolated DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche CuVBPB1102N Distributors
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