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VBNCB1603
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.003 at VGS = 10 V 0.005 at VGS = 4.5 V
ID (A)a 210 185
FEATURES
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:
www.VBsemi.com
I2PAK (TO-262)
D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
210 185 a
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)
IS
180 a
Avalanche Current
IAS
70
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.
VBNCB1603 Datasheet
