Description
VBM16R12 / VBMB16R12 www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at 25 °C (Ω) Qg ma.
Features
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
Applications
* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
* Industrial
D
GD S Top View
GDS Top View
G
S N-Channel MOSFET