VBJ2102M P-Channel MOSFET

VBsemi

Description

VBJ2102M P-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.200 at VGS = - 10 V 0.230 at VGS = - 6 V SOT-.

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Datasheet Specifications

Part number: VBJ2102M
Manufacturer: VBsemi
File Size: 254.08 KB
Datasheet: VBJ2102M-VBsemi.pdf
Description: P-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* Active Clamp in Intermediate DC/ DC Power Supplies
* H-Bridge High Side Switch for Lighting Application D P-Channel MOSFET Available ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C

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