Datasheet4U.com

VBE165R02S - N-Channel MOSFET

Product Overview

VBsemi

📥 Download Datasheet

VBE165R02S N-Channel MOSFET by VBsemi - Datasheet Preview — Datasheet preview – VBE165R02S

Datasheet Details

Part number	VBE165R02S
Manufacturer	VBsemi
File Size	533.53 KB
Description	N-Channel MOSFET
Datasheet	VBE165R02S Datasheet
Additional preview pages of the VBE165R02S datasheet.

Product details

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available RoHS.

📁 Similar Datasheet

VBE100-12NO7 - High Performance Fast Recovery Diode (IXYS)
VBE17-06NO7 - Single Phase Rectifier Bridge (IXYS)
VBE17-12NO7 - Single Phase Rectifier Bridge (IXYS)
VBE20 - Single Phase Rectifier Bridge (IXYS)
VBE26-06NO7 - High Performance Fast Recovery Diode (IXYS)
VBE26-12NO7 - High Performance Fast Recovery Diode (IXYS)
VBE55-06NO7 - High Performance Fast Recovery Diode (IXYS Corporation)
VBE55-12NO7 - High Performance Fast Recovery Diode (IXYS)

Other Datasheets by VBsemi

VBE165R10S - N-Channel Power MOSFET
VBE1606 - N-Channel MOSFET
VBE1615B - N-Channel MOSFET
VBE1638 - N-Channel MOSFET
VBE1695 - N-Channel MOSFET
VBE16R02S - N-Channel MOSFET

Published: Oct 14, 2024 |