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VB7101M N-Channel MOSFET

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Description

VB7101M N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.095 at VGS = 10 V 100 0.105 at VGS = 4.5 V ID (A)a, e.

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Datasheet Specifications

Part number
VB7101M
Manufacturer
VBsemi
File Size
238.42 KB
Datasheet
VB7101M-VBsemi.pdf
Description
N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Low On-Resistance
* 100 % Rg Tested

Applications

* DC/DC Converters, High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C I

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