RSD050N10TL N-Channel MOSFET

VBsemi

RSD050N10TL Description

RSD050N10TL RSD050N10TL Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) .

RSD050N10TL Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

RSD050N10TL Applications

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous S

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Datasheet Details

Part number: RSD050N10TL
Manufacturer: VBsemi
File Size: 513.69 KB
Datasheet: RSD050N10TL-VBsemi.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET VBsemi

VBsemi RSD050N10TL-like datasheet