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LSD11N65F - N-Channel 650V Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS) Available D G S N-Channel MOSFET.

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Datasheet preview – LSD11N65F

Datasheet Details

Part number LSD11N65F
Manufacturer VBsemi
File Size 265.75 KB
Description N-Channel 650V Power MOSFET
Datasheet download datasheet LSD11N65F Datasheet
Additional preview pages of the LSD11N65F datasheet.

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Full PDF Text Transcription

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LSD11N65F-VB LSD11N65F-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 109 0.
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