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K2687-01 - N-Channel 30V MOSFET

Features

  • Trench power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested D G GD S Top View.

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Datasheet Details

Part number K2687-01
Manufacturer VBsemi
File Size 309.94 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet K2687-01 Datasheet

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Full PDF Text Transcription (Reference)

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K2687-01_05-VB K2687-01_05-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package TO-220AB 30 0.007 0.010 70 Single TO-220AB FEATURES • Trench power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested D G GD S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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