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K22E10N1-VB
K22E10N1-VB Datasheet
N-Channel 100-V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
100 0.009 0.020 100 Single
FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
TO-220AB D
GD S
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 125 °C
100
ID
75 a
A
Pulsed Drain Current
IDM
300
Avalanche Current Single Pulse Avalanche Energyb
IAS
75
L = 0.
K22E10N1 Datasheet
