HY5110W
FEATURES
- Trench Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25 °Ca TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 100 ± 20 320 240 320 1220 123 366 650 183
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Base on Tc = 25°C. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB Mountc
SYMBOL Rth JA Rth JC
LIMIT 40...
