FQB6N15 N-Channel MOSFET

VBsemi

FQB6N15 Description

FQB6N15-VB FQB6N15-VB Datasheet N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VGS = 10 V .

FQB6N15 Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* PWM Optimized for Fast Switching

FQB6N15 Applications

* Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID

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Datasheet Details

Part number: FQB6N15
Manufacturer: VBsemi
File Size: 190.83 KB
Datasheet: FQB6N15-VBsemi.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET VBsemi

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