The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AO6800
Dual N-Channel 20 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V 20
0.028 at VGS = 2.5 V
ID (A)a 6.0 5.0
Qg (Typ.) 1.8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
TSOP-6 Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.