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2SJ168 - P-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • High-Side Switching.
  • Low On-Resistance: 3 .
  • Low Threshold: - 2 V (typ. ).
  • Fast Swtiching Speed: 20 ns (typ. ).
  • Low Input Capacitance: 20 pF (typ. ).
  • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D S G D P-Channel MOSFET.

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Datasheet Details

Part number 2SJ168
Manufacturer VBsemi
File Size 262.13 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ168 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ168 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 3 at VGS = - 10 V VGS(th) (V) - 1 to - 3 ID (mA) -500 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.
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