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2622GY Dual N-Channel MOSFET

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Description

2622GY-VB 2622GY-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 1.8 at VGS = 10 V ID (mA).

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Datasheet Specifications

Part number
2622GY
Manufacturer
VBsemi
File Size
343.95 KB
Datasheet
2622GY-VBsemi.pdf
Description
Dual N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Low On-Resistance: 1.8 Ω
* Low Threshold: 2 V (typ. )
* Low Input Capacitance: 30 pF
* Fast Switching Speed: 25 ns
* Low Input and Output Leakage
* TrenchFET® Power MOSFET
* Complia

Applications

* Direct Logic-Level Interface: TTL/CMOS
* Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
* Battery Operated Systems
* Solid-State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Vo

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