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2622GY - Dual N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low On-Resistance: 1.8 Ω.
  • Low Threshold: 2 V (typ. ).
  • Low Input Capacitance: 30 pF.
  • Fast Switching Speed: 25 ns.
  • Low Input and Output Leakage.
  • TrenchFET® Power MOSFET.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number 2622GY
Manufacturer VBsemi
File Size 343.95 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet 2622GY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2622GY-VB 2622GY-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 1.8 at VGS = 10 V ID (mA) 350 G1 3 mm S2 G2 D1 TSOP-6 Top View 1 6 D1 2 5 S1 3 4 D2 2.85 mm D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.8 Ω • Low Threshold: 2 V (typ.
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