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MIT-5A11C - SLOTTED PHOTOINTERRUPTER

Description

The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing .

It is a reflective subminiature photointerrupter.

Features

  • 1.72 (.068 04/01/2002 MIT-5A11C Optical-Electrical Characteristics @TA =25oC Parameter Input Forward Voltage Reverse Current Output Collector Dark Current Collector Emitter Collector Current Transfer Cha- Response Time (RISE) racteristics Response Time (FALL) symbol VF IR Iceo VCE(SAT) Ic (on) tr tf 500 20 20 100 100 Min. Typ. 1.2 Max. 1.4 10 100 0.4 Unit. V Test Conditions IF =20mA µA VR =5V nA V µS µS Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 Ic=100µA, Vce =5V RL =1k, d =1mm µA IF =20mA, Vce =5V Ty.

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Datasheet Details

Part number MIT-5A11C
Manufacturer Unity Opto Technology
File Size 51.99 KB
Description SLOTTED PHOTOINTERRUPTER
Datasheet download datasheet MIT-5A11C Datasheet
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Full PDF Text Transcription

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SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. 12.8 ± 0.05 (.504) 5.2 (.205) 3.2 ± 0.15 (.126) 6.4 (.252) MIT-5A11C Package Dimensions Unit: mm ( inches ) 1 4 2 3 (.150) 3.8 l l l l For- direct pc board or Dual - in - line socket mounting Fast switching speed Choice of mounting configuration. 0.5 (.020) 9.6 2.5 (.378) (.098) NOTE 1. Tolerance is ± 0.25 mm (.006") unless otherwise noted.
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