MIE-824A4 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Product Overview

Unity Opto Technology

Part number	MIE-824A4
Manufacturer	Unity Opto Technology
File Size	31.49 KB
Description	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet	MIE-824A4 Datasheet
Additional preview pages of the MIE-824A4 datasheet.

The MIE-824A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology.

l l l l 0.50 TYP. (.020) 23.40 MIN. (.921) High radiant power and high radiant intesity Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle: 120° 2.54 NOM. (.100) SEE NOTE 3 1.00MIN. (.039) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward.

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MIE-824H2 - GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-824L3 - GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-814A2 - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-111A1 - AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A1 - GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A2 - GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Published: Mar 26, 2005 |